Nazwa przedmiotu:
Electronics
Koordynator przedmiotu:
Bogdan Majkusiak
Status przedmiotu:
Obowiązkowy
Poziom kształcenia:
Studia I stopnia
Program:
Computer Science
Grupa przedmiotów:
Technical Courses
Kod przedmiotu:
EELE1
Semestr nominalny:
4 / rok ak. 2015/2016
Liczba punktów ECTS:
6
Liczba godzin pracy studenta związanych z osiągnięciem efektów uczenia się:
- attendance to lecture: 15 x 2 h = 30 h, - attendance to classes: 15 x 1 h = 15 h, - attendance to laboratory excercisess: 5 x 3 h = 15 h, - preparation to lectures (reviewing lecture notes, reading the literature): 30 h - preparation to classes (solutions to home tasks or projects): 30 h - preparation to laboratory excercises (reading the manuals, preparation to entrance tests): 5 x 2h = 10 h - completion or the laboratory reports: 5 x 2h = 10 h - preparation to written class tests: 3 x 4 h = 12 h. - participation in 3 consultations: 3 x 1h = 3 h TOTAL: 155 h = 6 ECTS
Liczba punktów ECTS na zajęciach wymagających bezpośredniego udziału nauczycieli akademickich:
30 h + 15 h + 15 h + 3 h = 63 h = 2 ECTS
Język prowadzenia zajęć:
angielski
Liczba punktów ECTS, którą student uzyskuje w ramach zajęć o charakterze praktycznym:
15 h + 10 h + 10 h = 35 h = 2 ECTS
Formy zajęć i ich wymiar w semestrze:
  • Wykład30h
  • Ćwiczenia15h
  • Laboratorium15h
  • Projekt0h
  • Lekcje komputerowe0h
Wymagania wstępne:
Basic knowledge in physics and mathematics
Limit liczby studentów:
30
Cel przedmiotu:
Lecture: to present physical and technical bases of electronics, including physical fundamentals, rules and models of operation of basic semiconductor devices and their circuit applications. Classes: to practice models of electron phenomena and devices as well as to consider their selected circuit applications Laboratory: to examine experimentally rules and models of operation of selected semiconductor devices and their circuits
Treści kształcenia:
Introduction (2h): Electronics – definition, generations, characteristics. Physical fundamentals (2h): Particle and wave representation of an electron, classical and quantum transport, energy spectrum of electrons in classical and quantum systems. Solid state (2): Bonds, energy bands, kinds of solids, band diagrams, electrons and holes, intrinsic and extrinsic semiconductors. Transport processes in solids (3): Generation-recombination, conduction mechanisms and currents (drift, diffusion), dielectric relaxation, junction phenomena. Semiconductor devices - physical structure, rules of operation, static model, small-signal model, switching characteristics, circuit applications (21h): Schottky diode, PN diode, Bipolar junction transistor, MOS capacitor, MOS field-effect transistor. Junction field-effect transistor, Laboratory excercises: L1. Fundamental phenomena in semiconductors L2. Diodes L3. Bipolar junction transistors L4. MOS structure and MOS Field Effect Transistor L5. Supply circuits
Metody oceny:
- three calculation tests assessed in the scale 0-5 points each, - five laboratory excercises assessed in the scale 0-5 points each: the assessment includes the entrance test, practical activities, laboratory report, - extra premium points for activity during lectures or classes. Total number of points: Grade: 36 < ∑ 5 32 < ∑ ≤ 36 4.5 28 < ∑ ≤ 32 4 24 < ∑ ≤ 28 3.5 20 < ∑ ≤ 24 3 ∑ ≤ 20 2
Egzamin:
nie
Literatura:
- B. Majkusiak, "Electronics - Lecture Notes", pdf tutorial available at the course website - K. Kano, "Semiconductor Devices", Prentice Hall, Inc., 1998. - R.T. Howe, C.S. Sodini, "Microelectronics - an Integrated Approach", Prentice-Hall Inc. - M. Hassul, D. Zimmerman, "Electronic Devices and Circuits", Prentice-Hall - Laboratory excercise manuals.
Witryna www przedmiotu:
https://studia.elka.pw.edu.pl
Uwagi:

Efekty uczenia się

Profil ogólnoakademicki - wiedza

Efekt EELE1_W01
A student has a basic knowledge on quantum-mechanical origins of the energy band structure of solids, their optical and electrical properties, transport mechanisms in solids and their junctions.
Weryfikacja: - Class calculation test 1. - Entrance test to the laboratory excercise L1. - Assessment of the laboratory report L1.
Powiązane efekty kierunkowe: K_W02
Powiązane efekty obszarowe: T1A_W01, T1A_W02, T1A_W03, T1A_W07
Efekt EELE1_W02
A student has a knowledge on rules of operation of basic semiconductor devices, their models and circuit applications: Schottky diode, PN diode, bipolar junction transistor, MOS field-effect transistor, junction field-effect transistor.
Weryfikacja: - Class calculation tests 2 and 3, - Entrance tests to laboratory excercises L2-L5 - Assessment of laboratory reports to L2-L5.
Powiązane efekty kierunkowe: K_W03
Powiązane efekty obszarowe: T1A_W02

Profil ogólnoakademicki - umiejętności

Efekt EELE1_U01
A student has the ability to predict electrical response of basic semiconductor devices to changed conditions of the bias, temperature, and signal frequency,
Weryfikacja: - Class calculation tests
Powiązane efekty kierunkowe: K_U08
Powiązane efekty obszarowe: T1A_U08, T1A_U09